Search results for "Temperature dependence"
showing 10 items of 20 documents
Nitrogen broadening of SF6 transitions in the nu3 band
2001
Abstract Nitrogen induced pressure-broadened halfwidths of a number of ν3 transitions of SF6 are calculated using the complex Robert–Bonamy (CRB) formalism. The calculations are made at 200, 250, 296 and 350 K and the temperature dependence of the halfwidths are determined. The intermolecular potential is taken as a sum of the leading electrostatic and Lennard-Jones [6] , [7] , [8] , [9] , [10] , [11] , [12] atom–atom components. The dynamics of the collision process are correct to second order in time. The calculated halfwidths are used to simulate the ν3 spectrum, which is compared to a simulation made using the HITRAN96 halfwidths and measurements made at the Universite Pierre et Marie C…
Influence of the electro-optical properties of an a-Si:H single layer on the performances of a pin solar cell
2012
We analyze the results of an extensive characterization study involving electrical and optical measurements carried out on hydrogenated amorphous silicon (α-Si:H) thin film materials fabricated under a wide range of deposition conditions. By adjusting the synthesis parameters, we evidenced how conductivity, activation energy, electrical transport and optical absorption of an α-Si:H layer can be modified and optimized. We analyzed the activation energy and the pre-exponential factor of the dark conductivity by varying the dopant-to-silane gas flow ratio. Optical measurements allowed to extract the absorption spectra and the optical bandgap. Additionally, we report on the temperature dependen…
Simulating Terahertz Field-Induced Ferroelectricity in Quantum Paraelectric SrTiO3
2021
Recent experiments have demonstrated that light can induce a transition from the quantum paraelectric to the ferroelectric phase of SrTiO3. Here, we investigate this terahertz field-induced ferroelectric phase transition by solving the time-dependent lattice Schrödinger equation based on first-principles calculations. We find that ferroelectricity originates from a light-induced mixing between ground and first excited lattice states in the quantum paraelectric phase. In agreement with the experimental findings, our study shows that the nonoscillatory second harmonic generation signal can be evidence of ferroelectricity in SrTiO3. We reveal the microscopic details of this exotic phase transi…
Characterization of a cryogenic ion guide at IGISOL
2012
A small volume cryogenic ion guide has been characterized at the IGISOL facility, Jyvaskyla, as a prototype to verify whether there are any major obstacles to the use of high-density cryogenic helium gas for the stopping and extraction of high-energy ions from a large volume cryogenic ion catcher. The expected temperature scaling of the mass flow through the ion guide has been confirmed, showing that for the same helium density, the differential pumping requirements are less stringent for cryogenic operation. At 90 K a clear reduction in the mass-analyzed impurities is achieved, although lower temperatures are required to freeze out oxygen and nitrogen. This is supported by the reduction in…
High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide
1993
A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are found for the existence of a large concentration of deep levels (1012–1013 cm−2), related to impurities adsorbed to stacking faults in this material. Above room temperature impurities can migrate from those defect zones and then become shallow in the bulk. The subsequent large increase of 3D electrons can change the dimensionality of the electron transport, which in most cases was 2D. The temperature dependence of the resistivity parallel to the c axis…
Transport properties of nitrogen doped p‐gallium selenide single crystals
1996
Nitrogen doped gallium selenide single crystals are studied through Hall effect and photoluminescence measurements in the temperature ranges from 150 to 700 K and from 30 to 45 K, respectively. The doping effect of nitrogen is established and room temperature resistivities as low as 20 Ω cm are measured. The temperature dependence of the hole concentration can be explained through a single acceptor‐single donor model, the acceptor ionization energy being 210 meV, with a very low compensation rate. The high quality of nitrogen doped GaSe single crystals is confirmed by photoluminescence spectra exhibiting only exciton related peaks. Two phonon scattering mechanisms must be considered in orde…
A field induced ferromagnetic-like transition below 2.8 K in Li2CuO2: An experimental and theoretical study
1998
The low temperature magnetic properties of the Li2CuO2 compound have been investigated by means of superconducting quantum interference device magnetometry. We find in addition to an antiferromagnetic phase below 9.5 K a ferromagnetic-like steep rise of the magnetization around 2.8 K. The observed low temperature behavior is discussed by considering second and fourth order magnetocrystalline effective anisotropy coefficients, in addition to the exchange couplings reported in the literature. Work at the Institut de Ciencia dels Materials was supported by the Spanish Comisión Interministerial de Ciencia y Technología Grant No. CICYT MAT 96-1037.
Temperature Sensor Based on Colloidal Quantum Dots PMMA Nanocomposite Waveguides
2012
In this paper, integrated temperature sensors based on active nanocomposite planar waveguides are presented. The nanocomposites consist of cadmium selenide (CdSe) and cadmium telluride (CdTe) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) matrix. When the samples are heated in a temperature range from 25$^{circ}{rm C}$ to 50 $^{circ}{rm C}$, the waveguided photoluminescence of QDs suffers from a strong intensity decrease, which is approximately quadratic dependent on temperature. Moreover, the wavelength peak of the waveguided emission spectrum of CdTe-PMMA shows a blue shift of 0.25 ${rm nm}/^{circ}{rm C}$, whereas it remains constant in the case of CdSe-PMMA. A temperature…
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
2017
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) an…
Impact of contact resistance on the electrical properties of MoS
2016
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, R C, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) a…